SI6473DQ Datasheet, PDF (2/4 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET

Si6473DQ
Vishay Siliconix
New Product
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = –250 mA
V_DS = 0 V, V_GS = "8 V
V_DS = –16 V, V_GS = 0 V
V_DS = –16 V, V_GS = 0 V, T_J = 70_C
V_DS = –5 V, V_GS = –4.5 V
V_GS = –4.5 V, I_D = –9.5 A
V_GS = –2.5 V, I_D = –8.5 A
V_GS = –1.8 V, I_D = –7.5 A
V_DS = –15 V, I_D = –9.5 A
I_S = –1.5 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
t_rr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = –10 V, V_GS = –5 V, I_D = –9.5 A
V_DD = –10 V, R_L = 15 W
I_D ^ –1 A, V_GEN = –4.5 V, R_G = 6 W
I_F = –1.5 A, di/dt = 100 A/ms
Min Typ Max Unit
–0.45
V
"100
nA
–1
mA
–10
20
A
0.010
0.0125
W
0.013
0.016
0.0175 0.0215
W
45
S
–0.64
–1.1
V
47.5
70
7.6
nC
7.6
42
60
33
50
220
330
ns
95
140
50
80
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30
30
V_GS = 5 thru 2 V
24
24
1.5 V
18
18
12
12
6
6
1V
0
0
0
3
6
9
12
0
V_DS – Drain-to-Source Voltage (V)
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2-2
Transfer Characteristics
T_C = 125_C
25_C
–55_C
0.5
1.0
1.5
2.0
V_GS – Gate-to-Source Voltage (V)
Document Number: 71164
S-01042—Rev. B, 15-May-00