SI6473DQ Datasheet, PDF (3/4 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET

New Product
Si6473DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.030
On-Resistance vs. Drain Current
10000
Capacitance
0.025
0.020
0.015
0.010
V_GS = 1.8 V
V_GS = 2.5 V
V_GS = 4.5 V
0.005
0
0
6
12
18
24
30
I_D – Drain Current (A)
Gate Charge
5
V_DS = 10 V
I_D = 9.5 A
4
8000
C_iss
6000
4000
2000
C_oss
C_rss
0
0
3
6
9
12
15
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
V_GS = 4.5 V
I_D = 9.5 A
1.4
3
1.2
2
1.0
1
0.8
0
0
10
20
30
40
50
Q_g – Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
30
0.6
–50 –25 0
25 50 75 100 125 150
T_J – Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.04
T_J = 150_C
10
T_J = 25_C
0.03
I_D = 9.5 A
0.02
0.01
1
0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD – Source-to-Drain Voltage (V)
Document Number: 71164
S-01042—Rev. B, 15-May-00
0
0
2
4
6
8
V_GS – Gate-to-Source Voltage (V)
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