SI6434DQ Datasheet, PDF (4/4 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

Si6434DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
30
20
On-Resistance vs. Gate-to-Source Voltage
0.10
0.08
10
0.06
T_J = 150_C
T_J = 25_C
0.04
0.02
I_D = 5.6 A
1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD – Source-to-Drain Voltage (V)
0
0
2
4
6
8
10
V_GS – Gate-to-Source Voltage (V)
Threshold Voltage
0.4
0.2
I_D = 250 mA
–0.0
–0.2
Single Pulse Power
50
T_C = 25_C
Single Pulse
40
30
–0.4
20
–0.6
10
–0.8
–1.0
–50
0
50
100
150
T_J – Temperature (_C)
0
0.01
0.1
1
Time (sec)
10
30
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10^–4
Single Pulse
10^–3
10^–2
10^–1
1
Square Wave Pulse Duration (sec)
10
30
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4
Document Number: 70178
S-49534—Rev. D, 06-Oct-97