SI6434DQ Datasheet, PDF (3/4 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

Si6434DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30
30
V_GS = 10 thru 5 V
25
25
4V
20
20
Transfer Characteristics
15
15
10
5
2, 1 V
3V
0
0
1
2
3
4
5
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.05
0.04
0.03
0.02
V_GS = 4.5 V
V_GS = 10 V
0.01
0
0
6
12
18
24
30
I_D – Drain Current (A)
Gate Charge
10
8
V_DS = 15 V
I_D = 5.6 A
6
4
2
10
T_C = 125_C
5
25_C
–55_C
0
0
1
2
3
4
5
1600
1400
1200
1000
800
600
400
200
0
0
V_GS – Gate-to-Source Voltage (V)
Capacitance
C_iss
C_oss
C_rss
5
10
15
20
25
30
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
2.0
V_GS = 10 V
I_D = 5.6 A
1.6
1.2
0.8
0
0
4
8
12
16
20
Q_g – Total Gate Charge (nC)
Document Number: 70178
S-49534—Rev. D, 06-Oct-97
0.4
–50
0
50
100
150
T_J – Junction Temperature (_C)
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