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SI6434DQ Datasheet, PDF (1/4 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET
N-Channel 30-V (D-S) MOSFET
Si6434DQ
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.028 @ VGS = 10 V
30
0.042 @ VGS = 4.5 V
ID (A)
"5.6
"4.5
TSSOP-8
D1D
S2
Si6434DQ
S3
G4
Top View
8D
7S
6S
5D
D
* Source Pins 2, 3, 6 and 7
G
must be tied common.
S*
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
30
"20
"5.6
"4.4
"30
1.25
1.5
1.0
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Maximum Junction-to-Ambienta
Parameter
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
Document Number: 70178
S-49534—Rev. D, 06-Oct-97
Symbol
RthJA
Limit
83
Unit
_C/W
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