SI6415DQ-T1 Datasheet, PDF (4/10 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

Si6415DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
0.10
10
T_J = 150 °C
0.08
0.06
T_J = 25 °C
0.04
0.02
I_D = 6.5 A
1
0.00 0.25 0.50 0.75 1.00 1.25 1.50
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.8
0.6
0.4
I_D = 250 µA
0.2
0.0
- 0.2
- 0.4
- 0.6
- 50 - 25
2
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
1
Duty Cycle = 0.5
0
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
60
50
40
30
20
10
0
0.01
0.1
1
Time (s)
Single Pulse Power
10 30
0.2
0.1
0.1
0.05
0.02
0.01
10^-4
Notes:
P_DM
Single Pulse
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R _thJA = 83 °C/W
3. T _JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10^-3
10^-2
10^-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
30
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?70639.
www.vishay.com
4
Document Number: 70639
S-80682-Rev. C, 31-Mar-08