SI6415DQ-T1 Datasheet, PDF (3/10 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
30
25
V_GS = 10 thru 4 V
25
20
20
15
15
10
10
3V
5
5
0
0
0.035
2
4
6
8
10
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0
0
4500
Si6415DQ
Vishay Siliconix
T_C = 125 °C
25 °C
- 55 °C
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.028
0.021
0.014
V_GS = 4.5 V
V_GS = 10 V
0.007
0
0
6
12
18
24
30
I_D - Drain Current (A)
On-Resistance vs. Drain Current
10
V_DS = 15 V
I_D = 6.5 A
8
6
4
2
0
0
10
20
30
40
50
Q_g - Total Gate Charge (nC)
Gate Charge
Document Number: 70639
S-80682-Rev. C, 31-Mar-08
3600
C_iss
2700
1800
C_oss
900
C_rss
0
0
6
12
18
24
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.8
V_GS = 10 V
1.6
I_D = 6.5 A
1.4
1.2
1.0
0.8
0.6
0.4
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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3