SI6415DQ-T1 Datasheet, PDF (1/10 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

P-Channel 30-V (D-S) MOSFET
Si6415DQ
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
- 30
0.019 at V_GS = - 10 V
0.030 at V_GS = - 4.5 V
I_D (A)
± 6.5
± 5.2
FEATURES
• Halogen-free
• TrenchFET^® Power MOSFETs
Pb-free
Available
RoHS*
COMPLIANT
S*
TSSOP-8
D1
S2
S3
G4
Si6415DQ
8D
7S
6S
5D
Top View
Ordering Information: Si6415DQ-T1
Si6415DQ-T1-GE3 (Lead (Pb)-free and Halogen-free)
G
* Source Pins 2, 3, 6 and 7
must be tied common.
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current (T_J = 150 °C)^a
T_A = 25 °C
T_A = 70 °C
I_D
Pulsed Drain Current
I_DM
Continuous Source Current (Diode Conduction)^a
I_S
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 70 °C
P_D
Operating Junction and Storage Temperature Range
T_J, T_stg
Limit
- 30
± 20
± 6.5
± 5.2
± 30
- 1.5
1.5
1.0
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Notes:
a. Surface Mounted on FR4 board, t ≤ 10 s.
Symbol
R_thJA
Limit
83
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 70639
S-80682-Rev. C, 31-Mar-08
Unit
V
A
W
°C
Unit
°C/W
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