SI6410DQ Datasheet, PDF (4/10 Pages) Fairchild Semiconductor – 30V N-Channel PowerTrench MOSFET

Si6410DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C unless noted
30
20
T_J = 150 °C
10
0.10
I_D = 7.8 A
0.08
0.06
0.04
T_J = 25 °C
0.02
1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.8
0.6
0.4
0.2
0.0
- 0.2
- 0.4
- 0.6
- 0.8
- 1.0
- 1.2
- 50 - 25
2
I_D = 250 µA
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
1
Duty Cycle = 0.5
0
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
60
50
40
30
20
10
0
0.01
0.10
1.00
10.00
Time (s)
Single Pulse Power
0.2
0.1
0.1
0.05
0.02
0.01
10^-4
Notes:
P_DM
Single Pulse
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R _thJA = 83 °C/W
3. T _JM T _A = P_DMZ_thJA(t)
4. Surface Mounted
10^-3
10^-2
10^-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
30
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Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?70661.
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4
Document Number: 70661
S-80682-Rev. D, 31-Mar-08