SI6410DQ Datasheet, PDF (3/10 Pages) Fairchild Semiconductor – 30V N-Channel PowerTrench MOSFET

TYPICAL CHARACTERISTICS 25 °C unless noted
30
V_GS = 10 V thru 4 V
24
18
12
6
0
0
0.030
3V
2
4
6
8
10
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.024
0.018
0.012
V_GS = 4.5 V
V_GS = 10 V
0.006
0
0
5
10
15
20
25
30
I_D - Drain Current (A)
On-Resistance vs. Drain Current
10
V_DS = 15 V
I_D = 7.8 A
8
6
4
2
0
0
9
18
27
36
45
Q_g - Total Gate Charge (nC)
Gate Charge
Document Number: 70661
S-80682-Rev. D, 31-Mar-08
Si6410DQ
Vishay Siliconix
30
24
18
12
6
0
0
4200
3500
T_C = 125°C
25 °C
1
2
3
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
- 55 °C
4
C_iss
2800
2100
1400
700
0
0
C_oss
C_rss
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
2.0
V_GS = 10 V
I_D = 7.8 A
1.6
1.2
0.8
0.4
0
- 50 - 25 0 25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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3