SI6410DQ Datasheet, PDF (1/10 Pages) Fairchild Semiconductor – 30V N-Channel PowerTrench MOSFET

N-Channel 30-V (D-S) MOSFET
Si6410DQ
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
30
0.014 at V_GS = 10 V
0.021 at V_GS = 4.5 V
I_D (A)
± 7.8
± 6.3
FEATURES
• Halogen-free
• TrenchFET^® Power MOSFETs
RoHS
COMPLIANT
D
TSSOP-8
D1
S2
S3
G4
Si6410DQ
8D
7S
6S
5D
Top View
Ordering Information: Si6410DQ-T1-GE3 (Lead (Pb)-free and Halogen-free)
* Source Pins 2, 3, 6 and 7
G
must be tied common.
S*
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
30
V
V_GS
± 20
Continuous Drain Current (T_J = 150 °C)^a
T_A = 25 °C
T_A = 70 °C
I_D
± 7.8
± 6.2
A
Pulsed Drain Current
I_DM
± 30
Continuous Source Current (Diode Conduction)^a
I_S
1.5
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 70 °C
P_D
1.5
1.0
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Notes:
a. Surface Mounted on FR4 board, t ≤ 10 s.
Symbol
R_thJA
Limit
83
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm.
Unit
°C/W
Document Number: 70661
S-80682-Rev. D, 31-Mar-08
www.vishay.com
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