SI5997DU Datasheet, PDF (4/9 Pages) Vishay Siliconix – Dual P-Channel 30 V (D-S) MOSFET

Si5997DU
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.18
0.15
I_D = 3 A
10
T_J = 150 °C
T_J = 25 °C
1
0.12
0.09
0.06
0.03
T_J = 125 °C
T_J = 25 °C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
2.2
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
30
2.0
1.8
I_D = 250 μA
1.6
1.4
1.2
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
Limited by R_DS(on)*
10
25
20
15
10
5
0
0.001 0.01
0.1
1
10
100 1000
Time (s)
Single Pulse Power, Junction-to-Ambient
100 μs
1
1 ms
0.1
T_A = 25 °C
Single Pulse
10 ms
BVDSS Limited
100 ms
1s
10 s
DC
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 67186
S10-2762-Rev. A, 29-Nov-10