SI5997DU Datasheet, PDF (3/9 Pages) Vishay Siliconix – Dual P-Channel 30 V (D-S) MOSFET

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
25
5
V_GS = 10 V thru 6 V
V_GS = 5 V
20
4
Si5997DU
Vishay Siliconix
15
V_GS = 4 V
10
5
V_GS = 3 V
0
V_GS = 2 V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.14
0.12
V_GS = 4.5 V
0.10
0.08
0.06
0.04
V_GS = 10 V
0.02
0.00
0
5
10
15
20
25
I_D - Drain Current (A)
On-Resistance vs. Drain Current
10
I_D = 5.1 A
8
V_DS = 15 V
6
V_DS = 7.5 V
4
V_DS = 24 V
3
2
1
0
0
800
T_C = 25 °C
T_C = 125 °C
1
2
T_C = - 55 °C
3
4
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
600
C_iss
400
200
C_oss
C_rss
0
0
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.6
I_D = 3 A
1.4
V_GS = 10 V
1.2
V_GS = 4.5 V
1.0
2
0.8
0
0
2
4
6
8
10
Q_g - Total Gate Charge (nC)
Gate Charge
Document Number: 67186
S10-2762-Rev. A, 29-Nov-10
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
www.vishay.com
3