SI5936DU Datasheet, PDF (4/9 Pages) Vishay Telefunken – Dual N-Channel 30-V (D-S) MOSFET

New Product
Si5936DU
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.100
10
T_J = 150 °C
0.080
0.060
T_J = 25 °C
0.040
1
0.020
I_D = 5 A
T_J = 125 °C
T_J = 25 °C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.000
0.0
2.0
4.0
6.0
8.0
10.0
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
2.0
30
1.8
1.6
1.4
I_D = 250 μA
1.2
1.0
0.8
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
25
20
15
10
5
0
0.001 0.01
0.1
1
10
Time (s)
100 1000
Single Pulse Power (Junction-to-Ambient)
100
Limited by R_DS(on)*
10
100 μs
1
1 ms
10 ms
0.1
T_A = 25 °C
BVDSS Limited
100 ms
1s
10 s
DC
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 62804
For technical questions, contact: [e-mail]
www.vishay.com
S12-2729-Rev. A, 12-Nov-12
4
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000