SI5936DU Datasheet, PDF (3/9 Pages) Vishay Telefunken – Dual N-Channel 30-V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
25
V_GS = 10 V thru 5 V
10
20
V_GS = 4 V
8
15
6
Si5936DU
Vishay Siliconix
10
5
V_GS = 3 V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.100
4
2
0
0.0
500
T_C = 25 °C
T_C = 125 °C
T_C = - 55 °C
1.0
2.0
3.0
4.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.080
0.060
0.040
V_GS = 4.5 V
0.020
V_GS = 10 V
0.000
0
10
20
30
40
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
8
I_D = 7 A
V_DS = 15 V
6
V_DS = 7.5 V
V_DS = 24 V
4
2
0
0
2
4
6
8
Q_g - Total Gate Charge (nC)
Gate Charge
400
C_iss
300
200
100
C_oss
C_rss
0
0
6
12
18
24
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.8
1.6
I_D = 5 A
V_GS = 10V
1.4
V_GS = 4.5 V
1.2
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 62804
For technical questions, contact: [e-mail]
www.vishay.com
S12-2729-Rev. A, 12-Nov-12
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000