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SI5935DC-T1-E3 Datasheet, PDF (4/10 Pages) Vishay Siliconix – Dual P-Channel 1.8 V (G-S) MOSFET
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Si5935DC
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.4
50
0.3
40
ID = 250 µA
0.2
30
0.1
20
0.0
- 0.1
10
- 0.2
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
100
Limited by RDS(on)*
10
0
10-4 10-3
10-2 10-1
1
10
Time (s)
Single Pulse Power
100 600
IDM Limited
P(t) = 0.0001
2
1
Duty Cycle = 0.5
1
ID(on)
Limited
P(t) = 0.001
P(t) = 0.01
0.1
TC = 25 °C
Single Pulse
P(t) = 0.1
P(t) = 1
P(t) = 10
DC
BVDSS Limited
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
0.2
0.1
0.1
0.05
0.02
0.01
10-4
Single Pulse
10-3
Notes:
PDM
t1
1.
2.
t2
Duty Cycle, D
Per Unit Base
=
=
R
t1
t2
thJA
=
90
°C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
10-2
10-1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
www.vishay.com
4
Document Number: 72220
S10-0936-Rev. C, 19-Apr-10
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