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SI5935DC-T1-E3 Datasheet, PDF (2/10 Pages) Vishay Siliconix – Dual P-Channel 1.8 V (G-S) MOSFET
Si5935DC
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VSD
VDS = VGS, ID = - 250 µA
VDS = 0 V, VGS = ± 8 V
VDS = - 20 V, VGS = 0 V
VDS = - 20 V, VGS = 0 V, TJ = 85 °C
VDS ≤ - 5 V, VGS = - 4.5 V
VGS = - 4.5 V, ID = - 3 A
VGS = - 2.5 V, ID = - 2.5 A
VGS = - 1.8 V, ID = - 0.6 A
VDS = - 10 V, ID = - 3 A
IS = - 0.9 A, VGS = 0 V
Total Gate Charge
Qg
Gate-Source Charge
Qgs
VDS = - 10 V, VGS = - 4.5 V, ID = - 3 A
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = - 10 V, RL = 10 Ω
ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
IF = - 0.9 A, dI/dt = 100 A/µs
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
Typ.
Max.
Unit
- 0.4
- 1.0
V
± 100
nA
-1
µA
-5
- 15
A
0.069 0.086
0.097 0.121
Ω
0.137 0.171
8
S
- 0.8
- 1.2
V
5.5
8.5
0.91
nC
1.6
18
30
32
50
42
65
ns
26
40
30
60
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
15
15
VGS = 5 V thru 3 V
12
2.5 V
12
9
9
2V
6
6
TC = - 55 °C
25 °C
125 °C
3
1.5 V
1V
0
0
1
2
3
4
5
VDS - Drain-to-Source Voltage (V)
Output Characteristics
3
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
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Document Number: 72220
S10-0936-Rev. C, 19-Apr-10