SI5935DC-T1-E3 Datasheet, PDF (3/10 Pages) Vishay Siliconix – Dual P-Channel 1.8 V (G-S) MOSFET

Si5935DC
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.30
800
0.25
0.20
0.15
0.10
0.05
0.00
0
V_GS = 1.8 V
V_GS = 2.5 V
V_GS = 4.5 V
3
6
9
12
15
I_D - Drain Current (A)
On-Resistance vs. Drain Current
600
C_iss
400
200
C_oss
C_rss
0
0
4
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
Capacitance
5
V_DS = 10 V
I_D = 3 A
4
1.6
V_GS = 4.5 V
I_D = 3 A
1.4
3
1.2
2
1.0
1
0.8
0
012345678
Q_g - Total Gate Charge (nC)
Gate Charge
20
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.4
10
T_J = 150 °C
T_J = 25 °C
0.3
I_D = 0.6 A
0.2
0.1
I_D = 3 A
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
Document Number: 72220
S10-0936-Rev. C, 19-Apr-10
0.0
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
www.vishay.com
3