SI5915BDC Datasheet, PDF (4/7 Pages) Vishay Siliconix – Dual P-Channel 8-V (D-S) MOSFET

Si5915BDC
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
0.30
I_D = 3.3 A
0.25
0.20
T_J = 150 °C
T_J = 25 °C
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.9
0.15
T_A = 125 °C
0.10
0.05
T_A = 25 °C
0.00
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
0.8
40
I_D = 250 µA
0.7
30
0.6
20
0.5
10
0.4
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
10
*Limited
by r_DS(on)
1
0.1
0
0.0001 0.001 0.01 0.1 1
10 100 1000
Time (sec)
Single Pulse Power
1 ms
10 ms
100 ms
1s
10 s
dc
T_A = 25 °C
Single Pulse
BVDSS Limited
0.01
0.01
*V_GS
0.1
1
10
V_DS - Drain-to-Source Voltage (V)
minimum V_GS at which r_DS(on) is specified
Safe Operating Area
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4
Document Number: 70484
S-71325–Rev. A, 02-Jul-07