SI5915BDC Datasheet, PDF (3/7 Pages) Vishay Siliconix – Dual P-Channel 8-V (D-S) MOSFET

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
5
V_GS = 5 thru 2.5 V
8
4
2V
6
3
Si5915BDC
Vishay Siliconix
4
2
0
0.0
0.30
1.5 V
1V
0.5
1.0
1.5
2.0
2.5
3.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.25
V_GS = 1.8 V
0.20
0.15
0.10
0.05
V_GS = 2.5 V
V_GS = 4.5 V
0.00
0
2
4
6
8
10
I_D - Drain Current (A)
On-Resistance vs. Drain Current
8
I_D = 4.1 A
6
V_DS = 4 V
4
V_DS = 6.4 V
2
0
0
2
4
6
8
10
Q_g - Total Gate Charge (nC)
Q_g - Gate Charge
Document Number: 70484
S-71325–Rev. A, 02-Jul-07
2
T_C = 125 °C
1
T_C = 25 °C
T_C = - 55 °C
0
0.0
0.5
1.0
1.5
2.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics Curves vs. Temp
800
600
C_iss
400
200
C_rss
C_oss
0
0
2
4
6
8
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.8
I_D = 3.3 A
1.6
V_GS = 1.8 V
1.4
1.2
V_GS = 2.5 V, 4.5 V
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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3