SI5915BDC Datasheet, PDF (1/7 Pages) Vishay Siliconix – Dual P-Channel 8-V (D-S) MOSFET

New Product
Dual P-Channel 8-V (D-S) MOSFET
Si5915BDC
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
0.070 at V_GS = - 4.5 V
-8
0.086 at V_GS = - 2.5 V
0.145 at V_GS = - 1.8 V
I_D (A)
4^a
4^a
3.6
Q_g (Typ)
5 nC
FEATURES
• TrenchFET^® Power MOSFET
• Low Thermal Resistance
• 40 % Smaller Footprint than TSOP-6
APPLICATIONS
RoHS
COMPLIANT
• Load Switch or Battery Switch for Portable Devices
1206-8 ChipFET^® (Dual)
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S₁
D₁
D₁
G₁
S₂
D₂
G₂
D₂
Bottom View
Marking Code
DG XXX
Lot Traceability
and Date Code
Part #
Code
Ordering Information: Si5915BDC-T1-E3 (Lead (Pb)-free)
S₁
S₂
G₁
G₂
D₁
P-Channel MOSFET
D₂
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
-8
V_GS
±8
V
T_C = 25 °C
- 4^a
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
- 4^a
- 4^{a, b, c}
T_A = 70 °C
- 3.2^{b, c}
A
Pulsed Drain Current
I_DM
- 10
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
- 4^a
- 1.9^{b, c}
T_C = 25 °C
3.1
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
2
1.7^{b, c}
W
T_A = 70 °C
1.1^{b, c}
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)^{d, e}
T_J, T_stg
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, f}
Maximum Junction-to-Foot (Drain)
t ≤ 5 sec
Steady State
Symbol
R_thJA
R_thJF
Typical
62
33
Maximum
74
40
Unit
°C/W
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 Board.
c. t = 5 sec.
d. See Solder Profile (http://www.vishay.com/ppg?73257). The 1206-8 ChipFET is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is
not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 120 °C/W.
Document Number: 70484
S-71325–Rev. A, 02-Jul-07
www.vishay.com
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