SI5858DU Datasheet, PDF (4/10 Pages) Vishay Siliconix – N-Channel 20-V (D-S) MOSFET with Schottky Diode

Si5858DU
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
10
V_GS = 3 V thru 5 V
16
V_GS = 2.5 V
8
V_GS = 2 V
12
V_GS = 1.5 V
6
8
4
V_GS = 1 V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.08
0.07
V_GS = 4.5 V
0.06
0.05
0.04
V_GS = 2.5 V
0.03
0.02
V_GS = 1.8 V
0.01
0.00
0
4
8
12
16
20
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
8
I_D = 4.4 A
6
V_DS = 10 V
4
V_DS = 16 V
2
4
2
0
0.0
800
T_C = 125 °C
25 °C
- 55 °C
0.3
0.6
0.9
1.2
1.5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
600
C_iss
400
200
C_oss
C_rss
0
0
4
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.6
V_GS = 4.5 V
1.4
I_D = 4.4 A
1.2
1.0
0.8
0
0
3
6
9
12
Q_g - Total Gate Charge (nC)
Gate Charge
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4
0.6
- 50 - 25 0 25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 73460
S-81449-Rev. B, 23-Jun-08