SI5858DU Datasheet, PDF (2/10 Pages) Vishay Siliconix – N-Channel 20-V (D-S) MOSFET with Schottky Diode

Si5858DU
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient (MOSFET)^{b, f}
R_thJA
45
55
Maximum Junction-to-Case (Drain) (MOSFET)
Maximum Junction-to-Ambient (Schottky)
R_thJC
12
R_thJA
49
15
°C/W
61
Maximum Junction-to-Case (Drain) (Schottky)
R_thJC
13
16
Notes:
a. Package limited.
b. Surface Mounted on FR4 board.
c. t = 5 s.
d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is
exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be
guaranteed and is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions for MOSFETS is 105 °C/W.
g. Maximum under Steady State conditions for Schottky is 110 °C/W.
SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
V_DS
V_GS = 0 V, I_D = 250 µA
V_DS Temperature Coefficient
V_GS(th) Temperature Coefficient
ΔV_DS/TJ
ΔV_GS(th)/TJ
I_D = 250 µA
Gate-Source Threshold Voltage
V_GS(th)
V_DS = V_GS, I_D = 250 µA
Gate-Source Leakage
I_GSS
V_DS = 0 V, V_GS = ± 8 V
Zero Gate Voltage Drain Current
I_DSS
V_DS = 20 V, V_GS = 0 V
V_DS = 20 V, V_GS = 0 V, T_J = 55 °C
On-State Drain Current^a
I_D(on)
V_DS ≤ 5 V, V_GS = 4.5 V
V_GS = 4.5 V, I_D = 4.4 A
Drain-Source On-State Resistance^a
R_DS(on)
V_GS = 2.5 V, I_D = 4.1 A
V_GS = 1.8 V, I_D = 1.8 A
Forward Transconductance^a
g_fs
V_DS = 10 V, I_D = 4.4 A
Dynamic^b
Input Capacitance
C_iss
Output Capacitance
C_oss
V_DS = 10 V, V_GS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
C_rss
Total Gate Charge
Q_g
V_DS = 10 V, V_GS = 8 V, I_D = 4.4 A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q_gs
Q_gd
R_g
t_d(on)
t_r
t_d(off)
t_f
t_d(on)
t_r
t_d(off)
t_f
V_DS = 10 V, V_GS = 4.5 V, I_D = 4.4 A
f = 1 MHz
V_DD = 10 V, R_L = 2.8 Ω
I_D ≅ 3.6 A, V_GEN = 4.5 V, R_g = 1 Ω
V_DD = 10 V, R_L = 2.8 Ω
I_D ≅ 3.6 A, V_GEN = 8 V, R_g = 1 Ω
Min.
20
0.4
- 20
Typ.
Max.
17.4
- 2.6
1.0
± 100
-1
- 10
0.032
0.037
0.0455
22
0.039
0.045
0.055
Unit
V
mV/°C
V
nA
µA
A
Ω
S
520
100
pF
60
10.5
16
6
9
nC
0.91
0.7
1.9
Ω
20
30
65
100
40
60
10
15
ns
5
10
12
20
26
40
8
15
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Document Number: 73460
S-81449-Rev. B, 23-Jun-08