SI5858DU Datasheet, PDF (1/10 Pages) Vishay Siliconix – N-Channel 20-V (D-S) MOSFET with Schottky Diode

Si5858DU
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET with Schottky Diode
MOSFET PRODUCT SUMMARY
V_DS (V)
20
R_DS(on) (Ω)
0.039 at V_GS = 4.5 V
0.045 at V_GS = 2.5 V
0.055 at V_GS = 1.8 V
I_D (A)^a
6
6
6
Q_g (Typ.)
6 nC
SCHOTTKY PRODUCT SUMMARY
V_KA (V)
V_F (V)
Diode Forward Voltage
20
0.375 at 1 A
I_F (A)^a
1
PowerPAK ChipFET Dual
FEATURES
• Halogen-free
• LITTLE FOOT^® Plus Power MOSFET
• New Thermally Enhanced PowerPAK^®
ChipFET^® Package
- Small Footprint Area
- Low On-Resistance
- Thin 0.8 mm Profile
APPLICATIONS
• Load Switch for Portable Applications
- Ideal for Boost Circuits
1
A
2
A
K
8
K
7
D
6
D
5
3
S
4
G
1.9 ^mm
Marking Code
JB XXX
Lot Traceability
and Date Code
Part # Code
D
K
G
RoHS
COMPLIANT
Bottom View
Ordering Information: Si5858DU-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
A
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage (MOSFET)
Reverse Voltage (Schottky)
Gate-Source Voltage (MOSFET)
Continuous Drain Current (T_J = 150 °C) (MOSFET)
Pulsed Drain Current (MOSFET)
Continuous Source Current (MOSFET Diode Conduction)
Average Forward Current (Schottky)
Pulsed Forward Current (Schottky)
Maximum Power Dissipation (MOSFET)
Maximum Power Dissipation (Schottky)
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)^{d, e}
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
T_C = 25 °C
T_A = 25 °C
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
V_DS
V_KA
V_GS
I_D
I_DM
I_S
I_F
I_FM
P_D
T_J, T_stg
Limit
20
20
±8
6^a
6^a
7.2^{b, c}
5.8^{b, c}
20
6.9
1.9^{b, c}
1^b
7
8.3
5.3
2.3^{b, c}
1.5^{b, c}
7.8
5
2.1
1.3
- 55 to 150
260
Document Number: 73460
S-81449-Rev. B, 23-Jun-08
Unit
V
A
W
W
°C
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