SI5471DC Datasheet, PDF (4/11 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET

New Product
Si5471DC
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.05
0.04
10
T_J = 150 °C
0.03
T_J = 25 °C
0.02
1
0.01
I_D = 9.1 A
T_J = 125 °C
T_J = 25 °C
0
0
0.3
0.6
0.9
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.1
0.9
I_D = 250 µA
0.7
0.5
0.00
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
40
30
20
10
0.3
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
Limited by R_DS(on)*
0
0.001 0.01
0.1
1
10
Time (s)
Single Pulse Power
10
1 ms
1
10 ms
T_A = 25 °C
Single Pulse
0.1
100 ms
1 s, 10 s
DC
BVDSS Limited
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
100 600
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4
Document Number: 64988
S09-1000-Rev. A, 01-Jun-09