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SI5471DC Datasheet, PDF (1/11 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET
New Product
P-Channel 20-V (D-S) MOSFET
Si5471DC
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.020 at VGS = - 4.5 V
- 20
0.028 at VGS = - 2.5 V
0.062 at VGS = - 1.8 V
ID (A)a, g
-6
-6
-6
Qg (Typ.)
30 nC
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switches
- Notebook
- Netbook
1206-8 ChipFET®
1
D
D
D
D
D
D
G
S
S
G
D
Bottom View
Ordering Information: Si5471DC-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
- 20
V
VGS
± 12
TC = 25 °C
- 6a
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
- 6a
- 6a, b, c
TA = 70 °C
- 6a, b, c
A
Pulsed Drain Current
IDM
- 25
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
- 5.2
- 2.1b, c
TC = 25 °C
6.3
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
4
2.5b, c
W
TA = 70 °C
1.6b, c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)e, f
TJ, Tstg
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta, c, d
t≤5s
RthJA
40
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
15
50
°C/W
20
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 95 °C/W.
e. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result
of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequate bottom side solder interconnection.
f. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
g. TC = 25 °C.
Document Number: 64988
S09-1000-Rev. A, 01-Jun-09
www.vishay.com
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