SI5471DC Datasheet, PDF (3/11 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET

New Product
Si5471DC
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
25
10
V_GS = 5 V thru 2.5 V
20
8
V_GS = 2 V
15
6
10
4
5
0
0.0
0.08
V_GS = 1.5 V
0.5
1.0
1.5
2.0
2.5
3.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
2
0
0.0
5000
T_C = 25 °C
T_C = 125 °C
T_C = - 55 °C
0.5
1.0
1.5
2.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
V_GS = 1.8 V
0.06
0.04
0.02
V_GS = 2.5 V
V_GS = 4.5 V
0.00
0
5
10
15
20
25
I_D - Drain Current (A)
On-Resistance vs. Drain Current
10
I_D = 9.1 A
8
V_DS = 10 V
6
V_DS = 5 V
V_DS = 16 V
4
2
4000
C_iss
3000
2000
1000
C_oss
C_rss
0
0
5
10
15
20
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.5
I_D = 9.1 A
1.3
V_GS = 4.5 V
V_GS = 2.5 V
1.1
0.9
0
0
15
30
45
60
75
Q_g - Total Gate Charge (nC)
Gate Charge
0.7
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 64988
S09-1000-Rev. A, 01-Jun-09
www.vishay.com
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