SI5456DU Datasheet, PDF (4/10 Pages) Vishay Siliconix – N-Channel 20-V (D-S) MOSFET

Si5456DU
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.05
T_J = 150 °C
T_J = 25 °C
10
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
2.0
0.04
0.03
0.02
I_D = 9.3 A; T_J = 125 °C
I_D = 9.3 A; T_J = 25 °C
I_D = 2 A; T_J = 125 °C
0.01
I_D = 2 A; T_J = 25 °C
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
1.8
40
1.6
I_D = 250 µA
30
1.4
20
1.2
10
1.0
0.8
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
0
0.001 0.01
0.1
1
10
100 1000
Time (s)
Single Pulse Power, Junction-to-Ambient
100 _{Limited by RDS(on)*}
100 µs
10
1 ms
1
T_A = 25 °C
Single Pulse
0.1
BVDSS Limited
10 ms
100 ms
1s
10 s
DC
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
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4
Document Number: 64800
S09-0665-Rev. A, 20-Apr-09