SI5456DU Datasheet, PDF (3/10 Pages) Vishay Siliconix – N-Channel 20-V (D-S) MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50
20
V_GS = 10 V thru 4 V
40
16
Si5456DU
Vishay Siliconix
30
20
V_GS = 3 V
10
0
0.0
0.020
V_GS = 2 V
0.5
1.0
1.5
2.0
2.5
3.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
12
T_C = - 55 °C
8
T_C = 25 °C
4
T_C = 125 °C
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
1500
0.016
0.012
0.008
V_GS = 4.5 V
V_GS = 10 V
0.004
0.000
0
10
20
30
40
50
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 14 A
8
V_DS = 5 V
6
V_DS = 10 V
4
V_DS = 16 V
1200
C_iss
900
600
300
C_rss
C_oss
0
0
5
10
15
20
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.6
I_D = 9.3 A
1.4
V_GS = 10 V
1.2
V_GS = 4.5 V
1.0
2
0.8
0
0
4
8
12
16
20
Q_g - Total Gate Charge (nC)
Gate Charge
Document Number: 64800
S09-0665-Rev. A, 20-Apr-09
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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