SI5435BDC-T1-GE3 Datasheet, PDF (4/10 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

Si5435BDC
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.6
50
0.5
0.4
40
I_D = 250 µA
0.3
30
0.2
0.1
20
0.0
- 0.1
10
- 0.2
- 0.3
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
0
10^-3
10^-2
10^-1
1
10
Time (s)
Single Pulse Power
100
Limited by R_DS(on)*
I_DM Limited
P(t) = 0.0001
10
100 600
2
1
Duty Cycle = 0.5
1
I_D(on)
Limited
P(t) = 0.001
P(t) = 0.01
0.1
T_C = 25 °C
Single Pulse
P(t) = 0.1
P(t) = 1
P(t) = 10
DC
BVDSS Limited
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area
0.2
0.1
0.1
0.05
0.02
0.01
10^-4
Notes:
P_DM
Single Pulse
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R _thJA = 80 °C/W
3. T _JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10^-3
10^-2
10^-1
1
10
Square Wave Pulse Duration (s)
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
www.vishay.com
4
Document Number: 73137
S09-0129-Rev. B, 02-Feb-09