SI5435BDC-T1-GE3 Datasheet, PDF (1/10 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

P-Channel 30-V (D-S) MOSFET
Si5435BDC
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
- 30
0.045 at V_GS = - 10 V
0.080 at V_GS = - 4.5 V
I_D (A)
- 5.9
- 4.4
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET^® Power MOSFETs
1206-8 ChipFET^®
1
D
D
D
D
D
D
G
S
Bottom View
Marking Code
BJ XXX
Lot Traceability
and Date Code
Part # Code
Ordering Information: Si5435BDC-T1-E3 (Lead (Pb)-free)
Si5435BDC-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
- 30
V
V_GS
± 20
Continuous Drain Current (T_J = 150 °C)^a
Pulsed Drain Current
T_A = 25 °C
T_A = 85 °C
I_D
- 5.9
- 4.3
- 4.3
- 3.1
A
I_DM
- 30
Continuous Source Current^a
I_S
- 2.1
- 1.1
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 85 °C
P_D
2.5
1.3
1.3
0.7
W
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)^{b, c}
T_J, T_stg
- 55 to 150
°C
260
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
t≤5s
Steady State
R_thJA
40
80
Steady State
R_thJF
15
50
95
°C/W
20
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result
of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 73137
S09-0129-Rev. B, 02-Feb-09
www.vishay.com
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