SI5435BDC-T1-GE3 Datasheet, PDF (3/10 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.20
1000
Si5435BDC
Vishay Siliconix
0.16
0.12
V_GS = 4.5 V
0.08
0.04
V_GS = 10 V
0.00
0
5
10
15
20
25
30
I_D - Drain Current (A)
On-Resistance vs. Drain Current
10
V_DS = 15 V
I_D = 4.3 A
8
800
C_iss
600
400
C_oss
200
C_rss
0
0
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.6
V_GS = 4.5 V
I_D = 4.3 A
1.4
6
1.2
4
1.0
2
0.8
0
0
3
6
9
12
15
18
Q_g - Total Gate Charge (nC)
Gate Charge
30
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.20
T_J = 150 °C
10
0.16
0.12
I_D = 4.3 A
T_J = 25 °C
0.08
0.04
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 73137
S09-0129-Rev. B, 02-Feb-09
www.vishay.com
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