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SI5401DC Datasheet, PDF (4/5 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET
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Si5401DC
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
50
0.3
40
ID = 250 mA
0.2
30
0.1
20
0.0
10
−0.1
Single Pulse Power
−0.2
−50 −25
0 25 50 75 100 125 150
TJ − Temperature (_C)
0
10−3
10−2
Safe Operating Area
100
*rDS(on) Limited
IDM Limited
10−1
1
10
Time (sec)
10
P(t) = 0.001
2
1
Duty Cycle = 0.5
1
ID(on)
Limited
0.1
TC = 25_C
Single Pulse
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
0.01
BVDSS Limited
0.1
1
10
100
VDS − Drain-to-Source Voltage (V)
*VGS u minimum VGS at which rDS(on) is specified
Normalized Thermal Transient Impedance, Junction-to-Ambient
100 600
0.2
0.1
0.1
0.05
0.02
0.01
10−4
Single Pulse
10−3
10−2
10−1
1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 80_C/W
3. TJM − TA = PDMZthJA(t)
4. Surface Mounted
10
100
600
www.vishay.com
4
Document Number: 73225
S-50038—Rev. A, 17-Jan-05
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