SI5401DC Datasheet, PDF (3/5 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET

New Product
Si5401DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.10
0.08
0.06
0.04
V_GS = 1.8 V
V_GS = 2.5 V
0.02
V_GS = 4.5 V
0.00
0
4
8
12
16
20
Capacitance
2000
1800
1600
1400
C_iss
1200
1000
800
600
400
C_oss
200
C_rss
0
0
4
8
12
16
20
I_D − Drain Current (A)
Gate Charge
5
V_DS = 10 V
I_D = 5.2 A
4
V_DS − Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
V_GS = 4.5 V, 2.5 V, 1.8 V
I_D = 5.2 A
1.4
3
1.2
2
1.0
1
0.8
0
0
4
8
12
16
20
Q_g − Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
20
T_J = 150_C
10
T_J = 125_C
T_J = 25_C
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD − Source-to-Drain Voltage (V)
Document Number: 73225
S-50038—Rev. A, 17-Jan-05
0.6
−50 −25 0
25 50 75 100 125 150
T_J − Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.12
I_D = 5.2 A
0.10
0.08
0.06
T_J = 125_C
0.04
0.02
0.00
0
T_J = 25_C
1
2
3
4
5
V_GS − Gate-to-Source Voltage (V)
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3