SI5401DC Datasheet, PDF (1/5 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET

New Product
Si5401DC
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.032 @ V_GS = −4.5 V
−20
0.040 @ V_GS = −2.5 V
0.053 @ V_GS = −1.8 V
I_D (A)
−7.1
−6.4
−5.5
1206-8 ChipFETr
Q_g (Typ)
16.5
FEATURES
D TrenchFETr Power MOSFET
D Ultra-Low On-Resistance
D Thermally Enhanced ChipFETr Package
D 40% Smaller Footprint Than TSOP-6
APPLICATIONS
D Load Switch, PA Switch, and Battery Switch
for Portable Devices
1
D
D
D
D
D
D
G
S
Bottom View
Ordering Information: Si5401DC-T1—E3
Marking Code
BO XXX
Lot Traceability
and Date Code
Part # Code
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Continuous Source Current^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)^{b, c}
T_A = 25_C
T_A = 85_C
T_A = 25_C
T_A = 85_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
−20
"8
−7.1
−5.2
−5.1
−3.7
−20
−2.1
−1.1
2.5
1.3
1.3
0.7
−55 to 150
260
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
t v 5 sec
40
Steady State
R_thJA
80
Steady State
R_thJF
15
50
95
_C/W
20
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation
process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder intercon-
nection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 73225
S-50038—Rev. A, 17-Jan-05
www.vishay.com
1