SI4992EY_09 Datasheet, PDF (4/9 Pages) Vishay Siliconix – Dual N-Channel 75-V (D-S) MOSFET

Si4992EY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.6
60
0.4
50
0.2
I_D = 250 µA
40
0.0
- 0.2
30
- 0.4
20
- 0.6
10
- 0.8
- 1.0
- 50 - 25 0
25 50 75 100 125 150 175
T_J - Temperature (°C)
Threshold Voltage
0
0.001
0.01 0.1
1
10
Time (s)
Single Pulse Power
100
Limited by R_DS(on)*
10
I_DM Limited
P(t) = 0.0001
100 600
2
1
Duty Cycle = 0.5
1
I_D(on)
Limited
P(t) = 0.001
P(t) = 0.01
0.1
T_A = 25 °C
Single Pulse
0.01
0.1
1
BVDSS Limited
10
P(t) = 0.1
P(t) = 1
P(t) = 10
DC
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area
0.2
0.1
0.1
0.05
0.02
0.01
10^-4
Single Pulse
10^-3
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4
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 85 °C/W
3. T_JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10^-2
10^-1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Document Number: 73082
S09-1341-Rev. C, 13-Jul-09