SI4992EY_09 Datasheet, PDF (1/9 Pages) Vishay Siliconix – Dual N-Channel 75-V (D-S) MOSFET

Dual N-Channel 75-V (D-S) MOSFET
Si4992EY
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
75
0.048 at V_GS = 10 V
0.062 at V_GS = 4.5 V
I_D (A)
4.8
4.2
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFETs
• 175 °C Maximum Junction Temperature
• High-Efficiency PWM Optimized
• Compliant to RoHS Directive 2002/95/EC
S_{1 1}
G_{1 2}
S_{2 3}
G_{2 4}
SO-8
Top View
8 ^D1
7 ^D1
6 ^D2
5 ^D2
Ordering Information: Si4992EY-T1-E3 (Lead (Pb)-free)
Si4992EY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D₁
D₂
G₁
G₂
S₁
N-Channel MOSFET
S₂
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
75
V
V_GS
± 20
Continuous Drain Current (T_J = 175 °C)^a
T_A = 25 °C
T_A = 85 °C
I_D
4.8
3.6
3.7
2.8
Continuous Source Current^a
I_S
2
1.1
A
Pulsed Drain Current
I_DM
20
Avalanche Current
L = 0.1 mH
I_AS
8
Single Avalanche Energy (Duty Cycle ≤ 1 %)
E_AS
3.2
mJ
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 85 °C
P_D
2.4
1.4
1.4
0.8
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
t ≤ 10 s
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
50
85
31
Maximum
62.5
110
37
Unit
°C/W
Document Number: 73082
S09-1341-Rev. C, 13-Jul-09
www.vishay.com
1