SI4992EY_09 Datasheet, PDF (3/9 Pages) Vishay Siliconix – Dual N-Channel 75-V (D-S) MOSFET

Si4992EY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.00
0
V_GS = 4.5 V
V_GS = 10 V
4
8
12
16
20
900
800
700
C_iss
600
500
400
300
200
C_oss
100
C_rss
0
0.0 12.5 25.0 37.5 50.0 62.5 75.0
I_D - Drain Current (A)
On-Resistance vs. Drain Current
V_DS - Drain-to-Source Voltage (V)
Capacitance
10
V_DS = 50 V
I_D = 4.8 A
8
6
4
2
0
0
3
6
9
12
15
Q_g - Total Gate Charge (nC)
Gate Charge
2.2
2.0
V_GS = 10 V
I_D = 4.8 A
1.8
1.6
1.4
1.2
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
30
0.10
T_J = 175 °C
10
0.08
I_D = 4.8 V
0.06
0.04
T_J = 25 °C
0.02
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 73082
S09-1341-Rev. C, 13-Jul-09
www.vishay.com
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