SI4982DY Datasheet, PDF (4/4 Pages) Vishay Siliconix – Dual N-Channel 100-V (D-S) MOSFET

Si4982DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
20
On-Resistance vs. Gate-to-Source Voltage
0.30
10
T_J = 150_C
0.25
0.20
0.15
0.10
I_D = 2.6 A
1
0
0.6
T_J = 25_C
0.2
0.4
0.6
0.8 1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Threshold Voltage
0.05
0.00
0
50
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
Single Pulse Power
0.3
40
0.0
I_D = 250 µA
30
- 0.3
20
- 0.6
- 0.9
10
- 1.2
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (_C)
0
0.01
0.10
1.00
10.00
Time (sec)
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10 ^{- 4}
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2-4
Single Pulse
10 ^{- 3}
10 ^{- 2}
10 ^{- 1}
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 62.5_C/W
3. T_JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
1
10
30
Document Number: 70748
S-03950—Rev. B, 26-May-03