SI4982DY Datasheet, PDF (1/4 Pages) Vishay Siliconix – Dual N-Channel 100-V (D-S) MOSFET

Si4982DY
Vishay Siliconix
Dual N-Channel 100-V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.150 @ V_GS = 10 V
100
0.180 @ V_GS = 6 V
I_D (A)
2.6
2.4
SO-8
S_{1 1}
G_{1 2}
S_{2 3}
G_{2 4}
8 ^D1
7 ^D1
6 ^D2
5 ^D2
Top View
Ordering Information: Si4982DY
Si4982DY-T1 (with Tape and Reel)
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
100
"20
2.6
2.1
20
1.7
2.0
1.3
- 55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
Document Number: 70748
S-03950—Rev. B, 26-May-03
Symbol
R_thJA
Limit
62.5
Unit
_C/W
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