SI4982DY Datasheet, PDF (3/4 Pages) Vishay Siliconix – Dual N-Channel 100-V (D-S) MOSFET

Si4982DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
20
Transfer Characteristics
16
V_GS = 10 thru 6 V
12
5V
8
4
0
0
0.25
3V
4V
1
2
3
4
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
16
12
8
4
0
0
1200
T_C = 125_C
25_C
- 55_C
1
2
3
4
5
6
V_GS - Gate-to-Source Voltage (V)
Capacitance
0.20
0.15
0.10
V_GS = 6 V
V_GS = 10 V
0.05
0.00
0
20
4
8
12
16
20
I_D - Drain Current (A)
Gate Charge
V_DS = 50 V
16
I_D = 2.6 A
12
900
C_iss
600
300
C_oss
C_rss
0
0
20
40
60
80
100
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
2.5
V_GS = 10 V
2.0
I_D = 2.6 A
1.5
8
1.0
4
0.5
0
0
7
14
21
28
Q_g - Total Gate Charge (nC)
Document Number: 70748
S-03950—Rev. B, 26-May-03
0.0
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (_C)
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