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SI4966DY Datasheet, PDF (4/4 Pages) Vishay Siliconix – Dual N-Channel 2.5-V (G-S) MOSFET | |||
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Si4966DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
40
TJ = 150_C
10
On-Resistance vs. Gate-to-Source Voltage
0.10
0.08
ID = 7.1 A
0.06
TJ = 25_C
0.04
0.02
1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD â Source-to-Drain Voltage (V)
Threshold Voltage
0.4
0
0
1
2
3
4
5
VGS â Gate-to-Source Voltage (V)
Single Pulse Power
30
0.2
24
â0.0
ID = 250 mA
18
â0.2
12
â0.4
6
â0.6
â50 â25
0 25 50 75 100 125 150
TJ â Temperature (_C)
0
0.01
0.10
1.00
Time (sec)
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
10.00
0.2
0.1
0.1
0.05
0.02
0.01
10â4
Single Pulse
10â3
www.vishay.com S FaxBack 408-970-5600
2-4
10â2
S
10â1
W P l D ti ( )
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 62.5_C/W
3. TJM â TA = PDMZthJA(t)
4. Surface Mounted
1
10
30
Document Number: 70718
S-54939âRev. A, 29-Sep-97
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