SI4966DY Datasheet, PDF (2/4 Pages) Vishay Siliconix – Dual N-Channel 2.5-V (G-S) MOSFET

Si4966DY
Vishay Siliconix
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = 250 mA
V_DS = 0 V, V_GS = "12 V
V_DS = 20 V, V_GS = 0 V
V_DS = 20 V, V_GS = 0 V, T_J = 55_C
V_DS w 5 V, V_GS = 4.5 V
V_GS = 4.5 V, I_D = 7.1 A
V_GS = 2.5 V, I_D = 6.0 A
V_DS = 10 V, I_D = 7.1 A
I_S = 1.7 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
t_rr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = 10 V, V_GS = 4.5 V, I_D = 7.1 A
V_DD = 10 V, R_L = 10 W
I_D ^ 1 A, V_GEN = 4.5 V, R_G = 6 W
I_F = 1.7 A, di/dt = 100 A/ms
Min Typ Max Unit
0.6
V
"100
nA
1
mA
5
20
A
0.019
0.025
W
0.025
0.035
27
S
1.2
V
25
50
6.5
nC
4
40
60
40
60
90
150
ns
40
60
40
80
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2-2
Document Number: 70718
S-54939—Rev. A, 29-Sep-97