SI4966DY Datasheet, PDF (1/4 Pages) Vishay Siliconix – Dual N-Channel 2.5-V (G-S) MOSFET

Si4966DY
Vishay Siliconix
Dual N-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.025 @ V_GS = 4.5 V
20
0.035 @ V_GS = 2.5 V
I_D (A)
"7.1
"6.0
S_{1 1}
G_{1 2}
S_{2 3}
G_{2 4}
SO-8
Top View
8 ^D1
7 ^D1
6 ^D2
5 ^D2
D₁ D₁
D₂ D₂
G₁
G₂
S₁
N-Channel MOSFET
S₂
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current (10 ms Pulse Width)
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
20
"12
"7.1
"5.7
"40
1.7
2
1.3
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambient^a
R_thJA
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70718
S-54939—Rev. A, 29-Sep-97
Limit
62.5
Unit
_C/W
www.vishay.com S FaxBack 408-970-5600
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