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SI4948BEY Datasheet, PDF (4/5 Pages) Vishay Siliconix – Dual P-Channel 60-V (D-S) 175 MOSFET
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Si4948BEY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.6
50
0.4
40
ID = 250 mA
0.2
30
Single Pulse Power
0.0
20
−0.2
10
−0.4
−50 −25
0 25 50 75 100 125 150
TJ − Temperature (_C)
0
10−3
10−2
10−1
1
10
Time (sec)
Safe Operating Area, Junction-to-Case
100
IDM Limited
10
Limited
by rDS(on)
P(t) = 0.0001
100 600
1
0.1
0.01
0.1
ID(on)
Limited
TA = 25_C
Single Pulse
BVDSS Limited
1
10
VDS − Drain-to-Source Voltage (V)
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
100
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10−4
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4
Single Pulse
10−3
10−2
10−1
1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 85_C/W
3. TJM − TA = PDMZthJA(t)
4. Surface Mounted
10
100
600
Document Number: 72847
S-40430—Rev. A, 15-Mar-04
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