SI4948BEY Datasheet, PDF (1/5 Pages) Vishay Siliconix – Dual P-Channel 60-V (D-S) 175 MOSFET

New Product
Si4948BEY
Vishay Siliconix
Dual P-Channel 60-V (D-S) 175_ MOSFET
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.120 @ V_GS = −10 V
−60
0.150 @ V_GS = −4.5 V
I_D (A)
−3.1
−2.8
S_{1 1}
G_{1 2}
S_{2 3}
G_{2 4}
SO-8
8 ^D1
7 ^D1
6 ^D2
5 ^D2
Top View
Ordering Information: Si4948BEY—E3 (Lead Free)
Si4948BEY-T1—E3 (Lead Free with Tape and Reel)
S₁
G₁
D₁
P-Channel MOSFET
S₂
G₂
D₂
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current (10 ms Pulse Width)
Continuous Source Current (Diode Conduction)^a
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
L = 0.1 mH
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
I_AS
E_AS
P_D
T_J, T_stg
−3.1
−2.6
−2
2.4
1.7
−60
"20
−25
15
11
−55 to 175
−2.4
−2.0
−1.1
1.4
0.95
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
t v 10 sec
Steady State
Steady State
Document Number: 72847
S-40430—Rev. A, 15-Mar-04
Symbol
R_thJA
R_thJF
Typical
53
85
30
Maximum
62.5
110
37
Unit
_C/W
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