SI4948BEY Datasheet, PDF (3/5 Pages) Vishay Siliconix – Dual P-Channel 60-V (D-S) 175 MOSFET

New Product
Si4948BEY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.40
0.35
0.30
0.25
0.20
0.15
V_GS = 4.5 V
V_GS = 10 V
0.10
0.05
0.00
0
5
10
15
20
25
I_D − Drain Current (A)
Gate Charge
10
V_DS = 30 V
I_D = 3.1 A
8
6
4
2
0
0
3
6
9
12
15
Q_g − Total Gate Charge (nC)
1000
Capacitance
800
C_iss
600
400
200
C_oss
0
C_rss
0
10
20
30
40
50
60
V_DS − Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
2.2
2.0
V_GS = 10 V
I_D = 3.1 A
1.8
1.6
1.4
1.2
1.0
0.8
0.6
−50 −25
0 25 50 75 100 125 150 175
T_J − Junction Temperature (_C)
Source-Drain Diode Forward Voltage
20
T_J = 150_C
10
T_J = 25_C
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD − Source-to-Drain Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
0.40
0.35
0.30
0.25
I_D = 3.1 A
0.20
0.15
0.10
0.05
0.00
0
2
4
6
8
10
V_GS − Gate-to-Source Voltage (V)
Document Number: 72847
S-40430—Rev. A, 15-Mar-04
www.vishay.com
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