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SI4943BDY Datasheet, PDF (4/5 Pages) Vishay Siliconix – Dual P-Channel 20-V (D-S) MOSFET
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Si4943BDY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.8
50
Single Pulse Power
0.6
ID = 250 mA
40
0.4
30
0.2
20
0.0
−0.2
10
−0.4
−50 −25
0 25 50 75 100 125 150
TJ − Temperature (_C)
0
10−2
10−1
Safe Operating Area, Junction-to-Ambient
100
rDS(on) Limited
IDM Limited
1
10
Time (sec)
100 600
10
1 ID(on)
Limited
1 ms
10 ms
100 ms
0.1
0.01
0.1
TA = 25_C
1s
Single Pulse
10 s
dc
BVDSS Limited
1
10
100
VDS − Drain-to-Source Voltage (V)
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10−4
10−3
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4
10−2
10−1
1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 80_C/W
3. TJM − TA = PDMZthJA(t)
4. Surface Mounted
10
100
600
Document Number: 73073
S-41527—Rev. A, 16-Aug-04
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