SI4943BDY Datasheet, PDF (2/5 Pages) Vishay Siliconix – Dual P-Channel 20-V (D-S) MOSFET

Si4943BDY
Vishay Siliconix
New Product
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = −250 mA
V_DS = 0 V, V_GS = "20 V
V_DS = −20 V, V_GS = 0 V
V_DS = −20 V, V_GS = 0 V, T_J = 55_C
V_DS = −5 V, V_GS = −10 V
V_GS = −10 V, I_D = −8.4 A
V_GS = −4.5 V, I_D = −6.7 A
V_DS = −10 V, I_D = −8.4 A
I_S = −1.7 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
R_g
t_d(on)
t_r
t_d(off)
t_f
t_rr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = −10 V, V_GS = −5 V, I_D = −8.4 A
f = 1 MHz
V_DD = −10 V, R_L = 10 W
I_D ^ −1 A, V_GEN = −10 V, R_g = 6 W
I_F = −1.7 A, di/dt = 100 A/ms
Min
Typ
Max Unit
−1
−3
V
"100
nA
−1
mA
−5
−30
A
0.016
0.019
W
0.026
0.031
20
S
−0.75
−1.2
V
17
25
5
nC
6.7
6
12
18
W
11
17
10
15
94
140
ns
60
90
55
80
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
30
24
18
12
6
0
0
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2
Output Characteristics
V_GS = 10 thru 5 V
4V
3V
1
2
3
4
5
V_DS − Drain-to-Source Voltage (V)
Transfer Characteristics
30
24
18
12
T_C = 125_C
6
25_C
−55_C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
V_GS − Gate-to-Source Voltage (V)
Document Number: 73073
S-41527—Rev. A, 16-Aug-04