SI4943BDY Datasheet, PDF (1/5 Pages) Vishay Siliconix – Dual P-Channel 20-V (D-S) MOSFET

New Product
Si4943BDY
Vishay Siliconix
Dual P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.019 @ V_GS = −10 V
−20
0.031 @ V_GS = −4.5 V
I_D (A)
−8.4
−6.7
SO-8
S_{1 1}
G_{1 2}
S_{2 3}
G_{2 4}
8 ^D1
7 ^D1
6 ^D2
5 ^D2
Top View
Ordering Information: Si4943BDY—E3
Si4943BDY-T1—E3 (with Tape and Reel)
FEATURES
D TrenchFETr Power MOSFET
D 100% R_g Tested
APPLICATIONS
D Load Switching
− Computer
− Game Systems
D Battery Switching
− 2-Cell Li-Ion
S₁
S₂
G₁
G₂
D₁
P-Channel MOSFET
D₂
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
−20
"20
−8.4
−6.3
−6.7
−5.1
−30
−1.7
−0.9
2.0
1.1
1.3
0.7
−55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1 ” x 1” FR4 Board.
Document Number: 73073
S-41527—Rev. A, 16-Aug-04
t v 10 sec
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
46
85
26
Maximum
62.5
110
35
Unit
_C/W
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